Datasheet
Microchip HV5812 20-Channel High-Voltage VFD Driver Datasheet
Datasheet of the HV5812 serial-input 20-output driver for vacuum-fluorescent displays, with outputs to 80 V.
Datasheet
Datasheet of the HV5812 serial-input 20-output driver for vacuum-fluorescent displays, with outputs to 80 V.
HV5812 20-Channel Serial-Input Vacuum Fluorescent Display Driver for Anode or Grid Features General Description • HVCMOS® Technology for High Performance The HV5812 is a 20-channel serial-input vacuum • Operating Voltage of up to 80V fluorescent display driver. It combines a 20-bit CMOS • High-speed Source Driver shift register, data latches and control circuitry with high-voltage MOSFET outputs. The HV5812 is • 5V CMOS Logic Circuitry primarily designed for vacuum fluorescent displays. • Up to 5 MHz Data Input Rate The CMOS shift register and latches allow direct • Excellent Noise Immunity interfacing with microprocessor-based systems. Data • Flexible High-voltage Supplies input rates are typically over 5 MHz with 5V logic supply. Especially useful for interdigit blanking, the Applications blanking input disables the output source drives and turns on the sink drivers. Using with TTL may require • Display Driver external pull-up resistors to ensure an input logic high. Package Types 28-lead PDIP 28-lead PLCC 28-lead SOW (Top view) (Top view) (Top view) 4 1 28 26 1 28 1 28 See Table 2-1 for pin information. 2016 Microchip Technology Inc. DS20005629A-page 1 HV5812 Functional Block Diagram BL VPP STROBE HVOUT1 VDD HVOUT2 DATA IN 20-bit 20-bit HVOUT3 CLK Shift Latch Register DATA OUT GND HVOUT20 DS20005629A-page 2 2016 Microchip Technology Inc. HV5812 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† Supply Voltage, VDD................................................................................................................................ –0.5V to +7.5V Supply Voltage, VPP .................................................................................................................................. –0.5V to +90V Logic Input Levels ............................................................................................................................ –0.3V to VDD +0.3V Maximum Operating Junction Temperature .........................................................................................................+125°C Storage Temperature ............................................................................................................................–55°C to +150°C Power Dissipation: 28-lead PDIP ......................................................................................................................................... 2000 mW 28-lead PLCC........................................................................................................................................ 1900 mW 28-Lead SOW........................................................................................................................................ 1700 mW † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS Parameter Sym. Min. Typ. Max. Unit Conditions Supply Voltage VDD 4.5 — 5.5 V Supply Voltage VPP 20 — 80 V Operating Junction Temperature TJ –40 — +125 °C DC ELECTRICAL CHARACTERISTICS Electrical Specifications: Over recommended operating conditions; TA = 25°C unless otherwise indicated. Parameter Sym. Min. Typ. Max. Unit Conditions Output Leakage Current IDSS — –5 –15 µA VOUT = 0V, TA = +70°C IOUT = –25 mA, VPP = 80V, 78 78.5 — TJ = +25°C HVOUT V IOUT = –25 mA, VPP = 80V, High-level Output VOH 77 78 — TJ = +125°C DATA 4.5 4.7 — V IOUT = –200 µA, VDD = 5V OUT — 1.5 3 IOUT = 1 mA, TJ = +25°C, VDD = 5V HVOUT V IOUT = 1 mA, TJ = +125°C, — 2.3 4 Low-level Output VOL VDD = 5V DATA — 200 250 V IOUT = +200 µA, VDD = 5V OUT Output Pull-down Current ISINK 2 3.5 — mA VOUT = 5V to VPP, VDD = 5V High-level Logic Input Voltage VIH 3.5 — 5.3 V VDD = 5V Low-level Logic Input Voltage VIL –0.3 — 0.8 V High-level Logic Input Current IIH — 0.05 0.5 µA VIN = VDD, VDD = 5V Low-level Logic Input Current IIL — –0.05 –0.5 µA VIN = 0.8V, VDD = 5V Quiescent VDD Supply — 100 300 All outputs high, VDD = 5V IDDQ µA Current — 100 300 All outputs low, VDD = 5V — 10 100 All outputs high, no load Quiescent VPP Supply Current IPPQ µA — 10 100 All outputs low, no load 2016 Microchip Technology Inc. DS20005629A-page 3 HV5812 AC ELECTRICAL CHARACTERISTICS Electrical Specifications: Over recommended operating conditions; TA = 25°C unless otherwise indicated. Parameter Sym. Min. Typ. Max. Unit Conditions tPHL — 2000 — Blanking to Output Delay ns CL = 30 pF, 50% to 50%, VDD=5V tPLH — 1000 — Output Fall Time tr — 1450 — ns CL = 30 pF, 90% to 10%, VDD = 5V Output Rise Time tf — 650 — ns CL = 30 pF, 10% to 90%, VDD = 5V Data Set-up Time tSU 75 — — ns See Timing Waveforms. Data Hold Time tH 75 — — ns See Timing Waveforms. Minimum Data Pulse Width tPWD 150 — — ns See Timing Waveforms. Minimum Clock Pulse Width tPWCLK 150 — — ns See Timing Waveforms. Minimum Time between Clock tCKS 300 — — ns See Timing Waveforms. Activation and Strobe Minimum Strobe Pulse Width tPWS 100 — — ns SeeTiming Waveforms. Typical Time between Strobe Activation and Output tSTO — 500 — ns See Timing Waveforms. Transition — 8 — TJ = +25°C, VDD = 5V Maximum Clock Frequency fCLK MHz — 5 — TJ = +125°C, VDD = 5V TEMPERATURE SPECIFICATIONS Parameter Sym. Min. Typ. Max. Unit Conditions TEMPERATURE RANGE Operating Junction Temperature TJ –40 — +125 °C Storage Temperature TS –55 — +150 °C PACKAGE THERMAL RESISTANCE 28-lead PDIP JA — 43 — °C/W 28-lead PLCC JA — 48 — °C/W 28-lead SOW JA — 55 — °C/W DS20005629A-page 4 2016 Microchip Technology Inc. HV5812 Timing Waveforms tPWCLK VIH CLK 50% 50% VIL tSU VIH DATA IN 50% tPWD 50% VIL th tPWS VIH tCKS 50% 50% STROBE VIL VIH BL 50% 50% VIL tPHL tPLH tSTO VOH HVOUT 90% 90% 50% 50% 10% 10% VOL tr tf 2016 Microchip Technology Inc. DS20005629A-page 5 HV5812 2.0 PIN DESCRIPTION The details on the pins of HV5812 28-lead PDIP, 28-lead PLCC and 28-lead SOW are listed on Table 2-1. Refer to Package Types for the location of pins. TABLE 2-1: PIN FUNCTION TABLE Pin Number Pin Name Description 1 VPP High-voltage power rail 2 Data Out Serial data output. Data output for cascading to the data input of the next device. 3 HVOUT20 High-voltage output 4 HVOUT19 High-voltage output 5 HVOUT18 High-voltage output 6 HVOUT17 High-voltage output 7 HVOUT16 High-voltage output 8 HVOUT15 High-voltage output 9 HVOUT14 High-voltage output 10 HVOUT13 High-voltage output 11 HVOUT12 High-voltage output 12 HVOUT11 High-voltage output 13 BLANKING Blank 14 GND Logic and high-voltage ground 15 CLOCK Data shift register clock 16 STROBE Strobe 17 HVOUT10 High-voltage output 18 HVOUT9 High-voltage output 19 HVOUT8 High-voltage output 20 HVOUT7 High-voltage output 21 HVOUT6 High-voltage output 22 HVOUT5 High-voltage output 23 HVOUT4 High-voltage output 24 HVOUT3 High-voltage output 25 HVOUT2 High-voltage output 26 HVOUT1 High-voltage output 27 Data In Serial data input 28 VDD Low-voltage logic power rail DS20005629A-page 6 2016 Microchip Technology Inc. HV5812 3.0 FUNCTIONAL DESCRIPTION Follow the steps below to power up and power down the HV5812: POWER-UP AND POWER-DOWN SEQUENCE Power-up Power-down Step Description Step Description 1 Connect ground. 1 Remove VPP. 2 Apply VDD. 2 Remove all inputs. 3 Set all inputs (Data, CLK, etc.) to a known state 3 Remove VDD. 4 Apply VPP. (Note 1) 4 Disconnect ground. Note 1: The VPP should not drop below VDD during operation. , FUNCTION TABLE (Note 1) Serial Shift Register Contents Serial Latch Contents Output Contents Clock Strobe Data Data Blanking Input I1 I2 I3... IN-1 IN Input I1 I2 I3... IN-1 IN I1 I2 I3... IN-1 IN Input Output H L to H H R1 R2...RN–2 RN–1 RN–1 — — — — — — — — — — L L to H L R1 R2...RN–2 RN–1 RN–1 — — — — — — — — — — X H to L R1 R2 R3...RN–1 RN RN — — — — — — — — — — — — X X X...X X X L R1 R2 R3...RN–1 RN — — — — — — — P1 P2 P3...PN–1 PN PN H P1 P2 P3...PN–1 PN L P1 P2 P3...PN–1 PN — — — — — — — — X X X...X X H L L L...L L Note 1: L = Low logic level H = High logic level X = Irrelevant P = Present state R = Previous state VDD VDD VPP L/T INPUT Data Out HVOUT GND GND GND Logic Inputs Logic Data Output High Voltage Outputs FIGURE 3-1: IO Circuits. 2016 Microchip Technology Inc. DS20005629A-page 7 HV5812 4.0 PACKAGE MARKING INFORMATION 4.1 Packaging Information 28-lead PDIP Example XXXXXX e3 HV5812P e3 YYWWNNN 1625859 28-lead PLCC Example XXXXXXXXX HV5812PJ e3 YYWWNNN e3 1611231 28-lead SOW Example XXXXXXX e3 HV5812WG e3 YYWWNNN 1678896 Legend: XX...X Product Code or Customer-specific information Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code e3 Pb-free JEDEC® designator for Matte Tin (Sn) * This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for product code or customer-specific information. Package may or not include the corporate logo. DS20005629A-page 8 2016 Microchip Technology Inc. HV5812 28-Lead PDIP (.600in Row Spacing) Package Outline (P) 1.565x.580in body, .250in height (max), .100in pitch D 28 E1 E Note 1 b1 (Index Area) 1 D1 D1 b Top View View B View B A Seating A A2 Plane L A1 e eA eB A Side View View A - A Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. Note: 1. $3LQLGHQWL¿HUPXVWEHORFDWHGLQWKHLQGH[DUHDLQGLFDWHG7KH3LQLGHQWL¿HUFDQEH DPROGHGPDUNLGHQWL¿HU DQHPEHGGHGPHWDOPDUNHU RU DSULQWHGLQGLFDWRU Symbol A A1 A2 b b1 D D1 E E1 e eA eB L † † MIN .140* .015 .125 .014 .030 1.380 .065 .590 .485 .600* .115 Dimension .100 .600 NOM - - - - - - - - - - - (inches) BSC BSC † MAX .250 .055* .195 .023 .070 1.565 .085* .625 .580 .700 .200 -('(&5HJLVWUDWLRQ069DULDWLRQ$%,VVXH%-XQH 7KLVGLPHQVLRQLVQRWVSHFL¿HGLQWKH-('(&GUDZLQJ 7KLVGLPHQVLRQGLIIHUVIURPWKH-('(&GUDZLQJ Drawings not to scale. 2016 Microchip Technology Inc. DS20005629A-page 9 HV5812 28-Lead PLCC Package Outline (PJ) .453x.453in. body, .180in. height (max), .050in. pitch .048/.042 x 45O D .056/.042 D1 x 45O 4 1 28 26 .150 MAX Note 1 (Index Area) 075 MAX E1 E Note 2 .020max (3 Places) Top View Vertical Side View View A b1 A Base .020 MIN A1 A2 Plane e Seating Plane b R Horizontal Side View View A Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. Notes: 1. $3LQLGHQWL¿HUPXVWEHORFDWHGLQWKHLQGH[DUHDLQGLFDWHG7KH3LQLGHQWL¿HUFDQEH DPROGHGPDUNLGHQWL¿HU DQHPEHGGHGPHWDOPDUNHU RU a printed indicator. 2. $FWXDOVKDSHRIWKLVIHDWXUHPD\YDU\ Symbol A A1 A2 b b1 D D1 E E1 e R MIN .165 .090 .062 .013 .026 .485 .450 .485 .450 .025 Dimension .050 NOM .172 .105 - - - .490 .453 .490 .453 .035 (inches) BSC MAX .180 .120 .083 .021 .032 .495 .456 .495 .456 .045 JEDEC Registration MS-018, Variation AB, Issue A, June, 1993. Drawings not to scale. DS20005629A-page 10 2016 Microchip Technology Inc. HV5812 28-Lead SOW (Wide Body) Package Outline (WG) 17.90x7.50mm body, 2.65mm height (max), 1.27mm pitch D θ1 28 E1 E L2 Gauge Plane Note 1 (Index Area 0.25D x 0.75E1) L Seating θ Plane L1 1 Top View View B A View h B A A2 Note 1 Seating h Plane A1 e b A Side View View A - A Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. Note: 1. $3LQLGHQWL¿HUPXVWEHORFDWHGLQWKHLQGH[DUHDLQGLFDWHG7KH3LQLGHQWL¿HUFDQEH DPROGHGPDUNLGHQWL¿HU DQHPEHGGHGPHWDOPDUNHU RU a printed indicator. Symbol A A1 A2 b D E E1 e h L L1 L2 ș ș MIN 2.15* 0.10 2.05 0.31 17.70* 9.97* 7.40* 0.25 0.40 0O 5O Dimension 1.27 1.40 0.25 NOM - - - - 17.90 10.30 7.50 - - - - (mm) BSC REF BSC O MAX 2.65 0.30 2.55* 0.51 18.10* 10.63* 7.60* 0.75 1.27 8 15O JEDEC Registration MS-013, Variation AE, Issue E, Sep. 2005. 7KLVGLPHQVLRQLVQRWVSHFL¿HGLQWKH-('(&GUDZLQJ Drawings are not to scale. S # S 28SO G 0 1309 2016 Microchip Technology Inc. DS20005629A-page 11 HV5812 NOTES: DS20005629A-page 12 2016 Microchip Technology Inc. HV5812 APPENDIX A: REVISION HISTORY Revision A (October 2016) • Converted Supertex Doc# DSFP-HV5812 to Microchip DS20005629A • Changed the packaging quantity of 28-lead PLCC (PJ M904) from 500/Reel to 750/Reel and 28-lead SOW (WG) from 1000/Reel to 1600/Reel • Made minor text changes throughout the docu- ment 2016 Microchip Technology Inc. DS20005629A-page 13 HV5812 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. Examples: PART NO. XX - X - X Device Package Environmental Media Type a) HV5812P-G: 20-Channel Serial-Input Vacuum Options Fluorescent Display Driver for Anode or Grid, 28-lead PDIP, 13/Tube Device: HV5812 = 20-Channel Serial-Input Vacuum b) HV5812PJ-G: 20-Channel Serial-Input Vacuum Fluorescent Display Driver for Anode or Fluorescent Display Driver for Grid Anode or Grid, 28-lead PLCC, 38/Tube c) HV5812PJ-G-M904: 20-Channel Serial-Input Vacuum Packages: P = 28-lead PDIP Fluorescent Display Driver for PJ = 28-lead PLCC Anode or Grid, 28-lead PLCC, WG = 28-lead SOW 750/Reel d) HV5812WG-G: 20-Channel Serial-Input Vacuum Fluorescent Display Driver for Environmental: G = Lead (Pb)-free/RoHS-compliant Package Anode or Grid, 28-lead SOW, 1600/Reel Media Types: (blank) = 13/Tube for a P Package = 38/Tube for a PJ Package = 1600/Reel f or a WG Package M904 = 750/Reel for a PJ Package DS20005629A-page 14 2016 Microchip Technology Inc. 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